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Buy G554752-1 with NSN 5962-01-467-9859 by Raytheon Company

Mfg Part Number: G554752-1

Alternate P/N: G5547521

NIIN : 014679859

CAGE Code : 49956

Manufacturer: Raytheon Company

Item Name : Microcircuit Memory

Thank you for your interest in our available parts and components on NSN Target. Microcircuit Memory is an item listed with the part number G554752-1, and it is manufactured by Raytheon Company. This particular item G554752-1 is currently available for purchase through our website today, and our team of industry experts are on standby 24/7x365 to provide rapid lead-times and competitive pricing. To begin the purchasing process, we invite you to fill out and submit an Instant RFQ form as provided through our website. Once received, a member of our staff will reach out to you in 15 minutes or less to provide a quote that has been personalized to fit your individual needs.

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NSN Parts is a website that is owned and operated by ASAP Semiconductor, and we serve as a leading independent distributor of NSN parts and components that serve many industries and applications. Throughout our extensive part and manufacturer catalogues, we carry a variety of top requested components that you may need, including G554752-1 with NSN 5962014679859 and other parts manufactured by Raytheon Company. Quality is of the utmost importance to us at NSN Parts, and we have established ourselves as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today with a personalized quote and experience how we are revolutionizing the parts procurement process.  

NSN Information for Part Number G554752-1 with NSN 5962-01-467-9859, 5962014679859

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-467-9859

Item Description:

Microcircuit Memory

59620146798590NB
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
G554752-1527

Characteristics Data of NSN 5962-01-467-9859, 5962014679859

MRCCriteriaCharacteristic
TTQYTerminal Type And Quantity24 PRINTED CIRCUIT
CZEQTime Rating Per Chacteristic100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
AFJQStorage Temp Range-65.0/+150.0 DEG CELSIUS
TESTTest Data Document81349-MIL-PRF-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.).
CQZPInput Circuit Pattern14 INPUT
CQSJInclosure MaterialCERAMIC AND GLASS
ADATBody Width0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CWSGTerminal Surface TreatmentSOLDER
CBBLFeatures ProvidedHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND SCHOTTKY AND W/BUFFERED OUTPUT
MRCDecoded RequirementClear Text Reply
ADAQBody Length1.290 INCHES MAXIMUM
AEHXMaximum Power Dissipation Rating1.02 WATTS
ADAUBody Height0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
FEATSpecial FeaturesBUILT UNDER MIL SPEC MIL-PRF-38510/21
CTFTCase Outline Source And DesignatorD-3 MIL-M-38510
CQSZInclosure ConfigurationDUAL-IN-LINE
AFGAOperating Temp Range-55.0/+125.0 DEG CELSIUS
ZZZKSpecification/Standard Data81349-MIL-PRF-38510/21 GOVERNMENT SPECIFICATION
CZERMemory Device TypeROM
CZENVoltage Rating And Type Per Characteristic5.5 VOLTS MAXIMUM POWER SOURCE
CQWXOutput Logic FormTRANSISTOR-TRANSISTOR LOGIC
CZZZMemory CapacityUNKNOWN

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