Mfg Part Number: 21049356-103
Alternate P/N: 21049356103
NSN : 5962-01-358-4070
NIIN : 013584070
CAGE Code : 81395
Item Name : Microcircuit Memory
Thank you for your interest in our available parts and components on NSN Target. Microcircuit Memory is an item listed with the part number 21049356-103, and it is manufactured by Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor. This particular item 21049356-103 is currently available for purchase through our website today, and our team of industry experts are on standby 24/7x365 to provide rapid lead-times and competitive pricing. To begin the purchasing process, we invite you to fill out and submit an Instant RFQ form as provided through our website. Once received, a member of our staff will reach out to you in 15 minutes or less to provide a quote that has been personalized to fit your individual needs.
NSN Parts is a website that is owned and operated by ASAP Semiconductor, and we serve as a leading independent distributor of NSN parts and components that serve many industries and applications. Throughout our extensive part and manufacturer catalogues, we carry a variety of top requested components that you may need, including 21049356-103 with NSN 5962013584070 and other parts manufactured by Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor. Quality is of the utmost importance to us at NSN Parts, and we have established ourselves as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today with a personalized quote and experience how we are revolutionizing the parts procurement process.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-358-4070 Item Description: Microcircuit Memory | 5962 | 013584070 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
21049356-103 | 5 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAT | BODY WIDTH0 510 INCHES MINIMUM AND 0 620 INCHES MAXIMUM |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC80 00 NANOSECONDS MAXIMUM DELAY |
MEMORY | ADAU | BODY HEIGHT0 155 INCHES MINIMUM AND 0 210 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING750 0 MILLIWATTS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN38 INPUT |
MEMORY | TEST | TEST DATA DOCUMENT96909-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | ADAQ | BODY LENGTH2 096 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY900 GATE ERASABLE PROGRAMMABLE LOGIC DEVICE |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND ULTRAVIOLET ERASABLE |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-5 MIL-M-38510 |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC100 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC20 00 INPUT PICOFARADS MAXIMUM AND 20 00 OUTPUT PICOFARADS MAXIMUM |
MEMORY | CZER | MEMORY DEVICE TYPEPAL |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT |
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